Na'urorin koyi na WIA SOOM

Masana'antar semiconductor Samfurin kai-tsaye

Kai ne ke gudanar da sashen lithography na masana'antar wafer ta 300 mm — na'urorin scanner takwas, ɗakin tsafta da girke-girke da dole ya zauna cikin ƙa'ida. Wafers suna jere, na'urori suna lalacewa, ɓarbashi yana shiga kuma fitarwa tana canzawa da kowace shawara.

Abin da za ka koya

Na'urar koyi

Lokaci 0 h
Samuwar na'ura 100% · Aiki a cikin tsari 20 · Ajin ISO na ɗakin tsafta 3.4S1⚙S2▶S3▶S4▶S5▶S6▶S7‖S8‖WIP 20▶ 34 wph
  • Mai samarwa
  • Jiran aiki
  • Injiniya
  • Ya lalace (gyara)
  • Ɓarbashi a cikin iska

Sarrafawa

Wafers da ake saki cikin sashe a awa.

Kason lokacin na’urar sikana da ake bai wa rukunin wafer na gwaji masu koyar da tsarin aiki: ƙarancin fitarwa yanzu, ƙarancin lahani daga baya.

Kowane mai fasaha yana gyara na'ura ɗaya a lokaci guda.

Ƙarin sauya iska yana narkar da ɓarbashi; ƙarfin fanfo yana ƙaruwa da sauri sau uku.

Kowane mutum da ke sanye da kayan aiki yana zubar da ɓarbashi.

Wafers da ake aunawa a awa: ginshiƙin SPC mafi kaifi, ɗan ƙarancin ƙarfi.

Yana ɗaukar sa'o'i 3 kuma yana ƙara mutane 2 a ɗaki yayin da suke aiki.

Sa'o'i 2 a rabin ƙarfi, sannan tsarin ya koma kan manufa.

Alamomi

Dies masu kyau da suka fito
19547/h
Fitarwa (yield)
89.8%
daidai
Ajin ISO na ɗakin tsafta
3.4
daidai
Lokacin zagayen sashe
1.6h
daidai
Samuwar na'ura100 %
Amfani da na'ura71 %
Lokacin injiniya10 %
Wafers da aka saki farawa34 wph
Aiki a cikin tsari20 wafers
Yawan lahani0.110 /cm²
Ƙwarewar tsari Cpk1.25 · gargaɗi
Wajen ƙa'ida (daidai da wafers)0.0 wph
Wutar sashe1339 kW

Yanayi

Dies masu kyau da suka fito: — /h250000

Samfurin SPC (kaucewar CD)

Samfurin SPC (kaucewar CD): 0 ⚑+3σ−3σ

Yanayin rikici

Mataki 1 · Wuce gona da iri na ɓarbashi

Aiki na yau da kullum a layin chip na wayar hannu. Wani wuri sama da sashen wani tacen rufi zai lalace. Ka riƙe ɗakin tsafta a cikin aji, ka kare fitarwa — kuma kada ka bar fanfunan a cikakken sauri fiye da yadda ake buƙata.

  • Ajin ISO ya koma ≤ 3.6 a ƙarshe
  • Ba ya wuce aji 4.55 bayan sa'a ta farko
  • Matsakaicin fitarwa ≥ 87 % a sa'o'in farko na wuce gona da iri
  • Matsakaicin wutar sashe ≤ 1,380 kW a rabi na biyu

Mataki 2 · Faɗuwar scanner

Sashen yana aiki da zafi a farawa 38 na wafer a awa. Scanners uku za su faɗi a lokaci guda. Ka hana layi ya fashe yayin da kake dawo da su, kuma har yanzu ka fitar da dies masu kyau.

  • WIP ≤ wafers 60 a ƙarshe
  • Lokacin zagaye ba ya taɓa wuce 3.5 h bayan faɗuwar (tagar lokacin layi)
  • Aƙalla dies masu kyau 900,000 cikin 48 h
  • Saki aƙalla farawar wafers 1,600 cikin 48 h (shirin farawa: 34 a awa)

Mataki 3 · Kaucewar girke-girke

Sabon sigar girke-girke ya fara aiki a daren jiya. Babu wanda ya sani tukuna cewa yana canza ma'aunin mai muhimmanci a hankali. Ka kalli ginshiƙin SPC: ka kama kauce kuma ka koma tsohon kafin wafers su fita daga ƙa'ida.

  • Mafi yawa wafers 12 daidai da wajen ƙa'ida gaba ɗaya
  • Cpk ≥ 1.2 a ƙarshe
  • Aƙalla dies masu kyau 620,000

Mataki 2 · Tashin sabon samfur

Wani babban chip na accelerator ya shiga samarwa da tsari da bai balaga ba: yawan lahani yana da yawa kuma die na 600 mm² ba ya yafewa. An ɗora layin a farawa 42 na wafer a awa. Kana da kwana 14. Ka daidaita fitarwar yau da koyon gobe.

  • Yawan lahani ≤ 0.08 /cm² a rana ta 14
  • Aƙalla dies masu kyau 660,000 cikin kwana 14

Tushe — samfurin da ke bayan lambobin

Kowace alaƙa da na'urar koyi ke amfani da ita, tare da tushenta. Ƙayyadaddun ƙimomin da aka yi wa alama a matsayin zato daidaitawa ne na misali.

Yanayin kayan aiki suna bin SEMI E10: mai samarwa, jiran aiki, injiniya, tsayawa da aka tsara da wanda ba a tsara ba.
Availability = up tools / 8 · Utilization = productive tool-hours / total[1]
Na'urori suna lalacewa ba tare da tsari ba tare da lokacin lalacewa na exponential; gyare-gyare suna jiran mai fasaha mara aiki.
P(fail in Δt) = 1 − e^(−Δt/MTBF), MTBF = 250 h; repair ~ Exp(mean 6 h) once a technician is free[17][1]Zato: girma (MTBF, yawan samarwa, k, τ) daidaitawa ne na misali, ba bayanai daga masana'antar gaske ba.
Ka'idar Little tana haɗa aiki a cikin tsari, fitarwa da lokacin zagaye.
CT = WIP / TH = T0 + queue / TH, T0 = 1 h[6][5]
A layin da ke daidai, fitarwa daidai take da yawan sakewa, don haka wafer da ba a saki farawarsa ba wafer ne da ba zai taɓa fitowa ba. Wafers da ke jira tsawon lokaci tsakanin matakai suna karya tagar lokacin layi.
TH = release rate while u < 1 ⇒ wafers out ≈ Σ starts; queue wait = CT − T0 = queue / TH ≤ queue-time window (3.5 h CT in semi-tool-crash)[5][16]Zato: iyakar lokacin zagaye ta 3.5 h tana tsaye ne a madadin tagar lokacin layi (queue time); injiniyoyin tsari ne ke saita ainihin tagogi mataki-mataki, kuma wafers da suka karya su yawanci ana zubar da su.
Kimanta Kingman: lokacin layi yana ƙaruwa kamar u/(1−u) — yana fashewa yayin da amfani ke kusantar 100 %.
CTq ≈ ((ca² + ce²)/2) · (u/(1−u)) · te[5]An nuna don fahimta: layin na'urar koyi yana tasowa ne daga zuwa ba da tsari ba da ƙarfi ba da tsari ba, ba daga wannan dabara ba.
Iyakar aji ta ISO 14644-1 don ɓarbashi mai girman D; a 0.1 µm aji shi ne logarithm na yawa.
Cn = 10^N · (0.1/D)^2.08 ⇒ N = log10(C≥0.1µm)[2]
Ɗaki da aka gauraya da kyau: yawa = samarwa ÷ (sauya iska × girma × ingancin tace).
C = G / (ACH · V · η)[13][11]Zato: girma (MTBF, yawan samarwa, k, τ) daidaitawa ne na misali, ba bayanai daga masana'antar gaske ba.
Ka'idar alaƙar fanfo: ƙarfi yana ƙaruwa da sau uku na saurin fanfo.
P_fan = P_max · (speed)³[10]
Fitarwa ta negative-binomial: lahani suna taruwa, don haka fitarwa tana raguwa a hankali fiye da yadda samfurin Poisson ke hasashe.
Y = (1 + A·D/α)^(−α), α = 2 (α→∞: Y = e^(−A·D))[3][4][15][14]
Koyon fitarwa (yield): yawan lahani yana raguwa zuwa matakin balaga yayin da ake kashe lokacin injiniya.
D(t+Δt) = D∞ + (D − D∞)·e^(−Δt/τ), τ = 120 h · (0.10 / engineering share)[15][18]Zato: τ an matse shi cikin lokaci kusan 100× idan aka kwatanta da adadin koyo da masana'antu suka bayar (4–6.5 % a wata, Leachman) domin yanayin kwana 14 ya nuna tasirin.
Ɓarbashi da ke sauka a kan wafers suna ƙara lahani masu kisa daidai da yawan iska.
D_total = D_learn + k · C, k = 4·10⁻⁶ cm⁻² per particle/m³Zato: ƙayyadadden ƙima na misali — masana'antun gaske suna daidaita yawan lahani masu kisa daga bayanan dubawarsu.
Fitarwa ta parametric: kaso na tsari na al'ada da ke faɗuwa a cikin iyakokin ƙa'ida; Cpk yana auna gibi.
Y_param = Φ((USL−μ)/σ) − Φ((LSL−μ)/σ), Cpk = min(USL−μ, μ−LSL)/(3σ)[7][8][19]
SPC: matsakaicin samfura n, tare da iyakokin sarrafawa ±3σ/√n da ƙa'idojin yanki.
x̄ ~ N(μ, σ/√n), control limits ±3σ/√n; zone rules (2 of 3 beyond 2σ, 4 of 5 beyond 1σ, 8 on one side)[8][7][12]
Sauran ƙayyadaddun ƙimomin aiki da samfurin ke amfani da su.
8 scanners × 6 wafer-starts/h · metrology −0.5 % capacity per sampled wafer/h · rollback: 2 h at half capacity + 4 wafer-equivalents reworked · drift 0.25 nm/h · crash repair 18 technician-hours · leak crew +2 people for 3 h · tools 150 kW busy / 60 kW idle, fans 150 kW at 100 %Zato: girma (MTBF, yawan samarwa, k, τ) daidaitawa ne na misali, ba bayanai daga masana'antar gaske ba.
Jimillar dies a kowace wafer ta 300 mm ga die mai fili A.
DPW = π·d²/(4A) − π·d/√(2A), d = 300 mm[9]

Rashin tsari: mai samar da mulberry32 mai iri; rarrabawar da aka yi amfani da su — uniform, exponential (inverse CDF), normal (Box–Muller), Poisson (Knuth). Ana nuna iri kuma ana iya raba shi.

Tushe

  1. SEMI E10 — Specification for Definition and Measurement of Equipment Reliability, Availability, and Maintainability (RAM) and Utilization — SEMI
  2. ISO 14644-1:2015 Cleanrooms and associated controlled environments — Part 1: Classification of air cleanliness by particle concentration — ISO, 2015
  3. C. H. Stapper, F. M. Armstrong, K. Saji — Integrated circuit yield statistics — Proceedings of the IEEE 71(4), 1983
  4. J. A. Cunningham — The use and evaluation of yield models in integrated circuit manufacturing — IEEE Trans. Semiconductor Manufacturing 3(2), 1990
  5. W. J. Hopp, M. L. Spearman — Factory Physics (3rd ed.), ch. 7–8: Little’s law, Kingman (VUT) equation — Waveland Press, 2008
  6. J. D. C. Little — A Proof for the Queuing Formula L = λW — Operations Research 9(3), 1961
  7. D. C. Montgomery — Introduction to Statistical Quality Control (x̄ charts, process capability Cpk) — Wiley, 2019
  8. NIST/SEMATECH e-Handbook of Statistical Methods — 6.3 Univariate and Multivariate Control Charts; 6.1.6 Process capability — NIST
  9. Dies-per-wafer estimate DPW = πd²/(4S) − πd/√(2S) (de Vries, “Investigation of gross die per wafer formulas”, IEEE TSM 18(1)) — IEEE, 2005
  10. Fan affinity laws: flow ∝ speed, pressure ∝ speed², power ∝ speed³ — U.S. DOE — Improving Fan System Performance: A Sourcebook for Industry
  11. EN 1822-1:2019 High efficiency air filters (EPA, HEPA and ULPA) — classification (U15 ≥ 99.9995 % at MPPS) — CEN, 2019
  12. Western Electric Statistical Quality Control Handbook (1956) — zone rules for control charts — Western Electric / NIST e-Handbook 6.3.2
  13. W. Whyte — Cleanroom Technology: Fundamentals of Design, Testing and Operation (2nd ed.), ch. on dispersion of particles from people; well-mixed room dilution equation — Wiley, 2010
  14. Yu. I. Bogdanov, N. A. Bogdanova, V. L. Dshkhunyan — Statistical Yield Modeling for IC Manufacture: Hierarchical Fault Distributions (§2 Compound Poisson distribution, after Eq. (17), p. 4 of the arXiv PDF — large-area clustering negative binomial model: the cluster parameter’s “typical values approximately range from 0.3 to 7”) — arXiv physics/0303039, 2003
  15. R. C. Leachman — Yield Modeling and Analysis (Poisson, Murphy, Seeds, negative-binomial models; §8: SMLY survey with C. N. Berglund for International SEMATECH, 2002–03 — yield loss fitted as YL(t) = YL(0)·e^(−λt), Table 2 averages 4.4 / 4.0 / 6.5 %/month at 350 / 250 / 180 nm) — UC Berkeley, IEOR 130 course notes (unpublished), 2014
  16. A. Klemmt, L. Mönch — Scheduling jobs with time constraints between consecutive process steps in semiconductor manufacturing (time windows set by process engineering against native oxidation and contamination; jobs that violate them are scrapped) — Proceedings of the 2012 Winter Simulation Conference, 2012
  17. NIST/SEMATECH e-Handbook of Statistical Methods — 8.1.6.1 Exponential distribution (constant failure rate) — NIST
  18. C. Weber — Yield learning and the sources of profitability in semiconductor manufacturing and process development — IEEE Trans. Semiconductor Manufacturing 17(4), 2004
  19. M. Abramowitz, I. Stegun — Handbook of Mathematical Functions, 26.2.17 — NBS, 1964

Waɗanda ke yin wannan a matsayin sana'a

Samfurin ilimi — ba don yanke shawarar aiki ba. Wuraren gaske suna daidaita kowace ƙayyadaddiyar ƙima da kayan aiki da bayanansu.