Fab semiconductor Ụdị dị ndụ

Ị na-ejikwa lithography bay nke fab wafer 300 mm — scanner asatọ, cleanroom na recipe nke ga-anọ n'ime nkọwapụta. Wafer na-eme ahịrị, ngwá ọrụ na-agbaji, obere ihe na-abanye, yield na-agbanwe na mkpebi ọ bụla.

Ihe ị ga-amụta

Simulator

Oge 0 h
Ịdị adị ngwá ọrụ 100% · Ọrụ n'usoro 20 · Ọkwa ISO cleanroom 3.4S1⚙S2▶S3▶S4▶S5▶S6▶S7‖S8‖WIP 20▶ 34 wph
  • Na-emepụta
  • Nkwadebe
  • Injinia
  • Ada (ndozi)
  • Obere ihe dị n'ikuku

Njikwa

Wafer a hapụrụ n'ime bay kwa awa.

Òkè oge scanner a na-enye ụyọkọ wafer nnwale na-akụzi usoro ahụ: obere mmepụta ugbu a, obere ntụpọ mgbe e mesịrị.

Onye teknishien ọ bụla na-ekwado otu ngwá ọrụ n'otu oge.

Ọtụtụ mgbanwe ikuku na-eme ka obere ihe dị ntakịrị belata; ike fan na-eto na ọsọ n'ọkwa nke atọ.

Onye ọ bụla e yiri uwe ṅụrụ ṅụrụ ka na-ewepụ obere ihe.

Wafer a tụrụ kwa awa: eserese SPC dị nkọ, obere ikike dị ntakịrị.

Na-ewe awa 3 ma na-agbakwunye mmadụ 2 n'ime ụlọ mgbe ha na-arụ ọrụ.

Awa 2 na ọkara ikike, wee usoro ahụ laghachi n'ebumnuche.

Ihe ngosi

Die ọma pụtara
19547/h
Yield
89.8%
nkịtị
Ọkwa ISO cleanroom
3.4
nkịtị
Oge okirikiri bay
1.6h
nkịtị
Ịdị adị ngwá ọrụ100 %
Ojiji ngwá ọrụ71 %
Oge injinia10 %
Mmalite wafer a tọhapụrụ34 wph
Ọrụ n'usoro20 wafers
Ọnụọgụ ntụpọ0.110 /cm²
Ike usoro Cpk1.25 · ịdọ aka ná ntị
N'èzí nkọwapụta (nha wafer)0.0 wph
Ike bay1339 kW

Ọnọdụ

Die ọma pụtara: — /h250000

Nlele SPC (mgbanwe CD)

Nlele SPC (mgbanwe CD): 0 ⚑+3σ−3σ

Ọnọdụ nsogbu

Ọkwa 1 · Njigharị obere ihe

Mgbe ọrụ a na-emekarị n'ahịrị chip ekwentị. Ebe ụfọdụ n'elu bay ihe nzacha elu ụlọ na-adị njikere ịda. Debe cleanroom n'ime ọkwa, chekwaa yield — ma hapụla fan na ọsọ zuru oke karịa ka ịchọrọ.

  • Ọkwa ISO laghachiri ≤ 3.6 na njedebe
  • Adịghị n'elu ọkwa 4.55 mgbe awa mbụ gasịrị
  • Yield n'ozuzu ≥ 87 % n'awa mbụ nke njigharị
  • Ike bay n'ozuzu ≤ 1,380 kW n'ọkara nke abụọ

Ọkwa 2 · Scanner dara

Bay na-agba ọsọ na wafer 38 kwa awa. Scanner atọ na-adị njikere ịda n'otu oge. Gbochie ahịrị ịgbawa mgbe ị na-ewetaghachi ha, ma nyefekwa die ọma.

  • WIP ≤ wafer 60 na njedebe
  • Oge okirikiri anaghị agafe 3.5 h mgbe ọdịda gasịrị (windo queue-time)
  • Opekata mpe die ọma 900,000 n'awa 48
  • Tọhapụ opekata mpe mmalite wafer 1,600 n'ime 48 h (atụmatụ mmalite: 34 kwa awa)

Ọkwa 3 · Mgbagharị recipe

Mgbanwe recipe ọhụrụ pụtara n'abalị ụnyaahụ. Onye ọ bụla amaghị ma ọ na-ewepụ nwayọọ akụkụ dị oke mkpa. Lee eserese SPC: nweta ọgbaghara ma laghachi tupu wafer ada n'èzí nkọwapụta.

  • Ihe kacha ọtụtụ nha wafer 12 n'èzí nkọwapụta n'ozuzu
  • Cpk ≥ 1.2 na njedebe
  • Opekata mpe die ọma 620,000

Ọkwa 2 · Ịrị elu ngwaahịa ọhụrụ

Chip accelerator buru ibu na-abanye n'mmepụta na usoro na-adịghị tozuru: ọnụọgụ ntụpọ dị elu ma die 600 mm² anaghị agbaghara. A na-ebu ahịrị na wafer 42 kwa awa. Ị nwere ụbọchị 14. Dozie mmepụta taa megide mmụta maka echi.

  • Ọnụọgụ ntụpọ ≤ 0.08 /cm² n'ụbọchị 14
  • Opekata mpe die ọma 660,000 n'ụbọchị 14

Ntọala — ụdị dị n'azụ ọnụọgụ

Mmekọrịta ọ bụla simulator na-eji, na isi mmalite ya. Ihe na-agbanwe agbanwe akara dị ka echiche bụ nhazi ngosi.

Ọnọdụ ngwá ọrụ na-agbaso SEMI E10: na-emepụta, nkwadebe, injinia, nkwụsị a haziri na nke a na-ahazighị.
Availability = up tools / 8 · Utilization = productive tool-hours / total[1]
Ngwá ọrụ na-ada n'ụzọ enweghị usoro site n'oge ọdịda exponential; ndozi na-eche onye teknishien efu.
P(fail in Δt) = 1 − e^(−Δt/MTBF), MTBF = 250 h; repair ~ Exp(mean 6 h) once a technician is free[17][1]Echiche: oke (MTBF, ọnụego mmepụta, k, τ) bụ nhazi ngosi, ọ bụghị data sitere na fab n'ezie.
Iwu Little na-ejikọta ọrụ n'usoro, mmepụta na oge okirikiri.
CT = WIP / TH = T0 + queue / TH, T0 = 1 h[6][5]
N'ahịrị kwụsiri ike, mmepụta hà nhata ọnụego ntọhapụ, ya mere mmalite wafer a tọhapụghị bụ wafer na-agaghị apụta. Wafer na-eche ogologo oge n'etiti usoro na-emebi windo queue-time.
TH = release rate while u < 1 ⇒ wafers out ≈ Σ starts; queue wait = CT − T0 = queue / TH ≤ queue-time window (3.5 h CT in semi-tool-crash)[5][16]Echiche: oke oge okirikiri 3.5 h na-anọchi anya windo queue-time; process engineering na-esetịpụ windo n'ezie n'usoro n'usoro, a na-atụfukarị wafer mebiri ha.
Ịbịaru nso Kingman: oge ahịrị na-eto dị ka u/(1−u) — ọ na-agbawa ka ojiji na-eru nso 100 %.
CTq ≈ ((ca² + ce²)/2) · (u/(1−u)) · te[5]E gosiri maka nghọta: ahịrị simulator na-apụta site na ọbịbịa enweghị usoro na ikike enweghị usoro karịa site na usoro a.
Oke ọkwa ISO 14644-1 maka obere ihe nke nha D; na 0.1 µm ọkwa bụ log nke ntinye.
Cn = 10^N · (0.1/D)^2.08 ⇒ N = log10(C≥0.1µm)[2]
Ụlọ jikọtara nke ọma: ntinye = mmepụta ÷ (mgbanwe ikuku × olu × ọrụ nzacha).
C = G / (ACH · V · η)[13][11]Echiche: oke (MTBF, ọnụego mmepụta, k, τ) bụ nhazi ngosi, ọ bụghị data sitere na fab n'ezie.
Iwu ihe yiri fan: ike na-ebili na kubu nke ọsọ fan.
P_fan = P_max · (speed)³[10]
Yield negative-binomial: ntụpọ na-ejikọta, ya mere yield na-agbada nwayọọ karịa ihe ụdị Poisson na-ebu amụma.
Y = (1 + A·D/α)^(−α), α = 2 (α→∞: Y = e^(−A·D))[3][4][15][14]
Mmụta yield: ọnụọgụ ntụpọ na-ebelata gaa n'ọkwa tozuru etozu ka a na-etinye oge injinia.
D(t+Δt) = D∞ + (D − D∞)·e^(−Δt/τ), τ = 120 h · (0.10 / engineering share)[15][18]Echiche: τ bụ oge e kpọkọtara ihe dị ka okpukpu 100 megide ọnụego mmụta ụlọ ọrụ e kọrọ (4–6.5 % kwa ọnwa, Leachman) ka ọnọdụ ụbọchị 14 gosi mmetụta ahụ.
Obere ihe ndị na-ada na wafer na-agbakwunye ntụpọ egbu egbu n'oke ntinye ikuku.
D_total = D_learn + k · C, k = 4·10⁻⁶ cm⁻² per particle/m³Echiche: ihe na-agbanwe agbanwe ngosi — fab n'ezie na-edozi ọnụego ntụpọ egbu egbu site na data nyocha nke ha.
Yield parametric: oke usoro nkịtị nke dara n'ime oke nkọwapụta; Cpk na-atụ ọkpụkpọ.
Y_param = Φ((USL−μ)/σ) − Φ((LSL−μ)/σ), Cpk = min(USL−μ, μ−LSL)/(3σ)[7][8][19]
SPC: nkezi nke nlele n, na oke njikwa ±3σ/√n na iwu mpaghara.
x̄ ~ N(μ, σ/√n), control limits ±3σ/√n; zone rules (2 of 3 beyond 2σ, 4 of 5 beyond 1σ, 8 on one side)[8][7][12]
Ihe ndị ọzọ na-agbanwe agbanwe ejiri na ụdị a.
8 scanners × 6 wafer-starts/h · metrology −0.5 % capacity per sampled wafer/h · rollback: 2 h at half capacity + 4 wafer-equivalents reworked · drift 0.25 nm/h · crash repair 18 technician-hours · leak crew +2 people for 3 h · tools 150 kW busy / 60 kW idle, fans 150 kW at 100 %Echiche: oke (MTBF, ọnụego mmepụta, k, τ) bụ nhazi ngosi, ọ bụghị data sitere na fab n'ezie.
Ọnụọgụ die zuru oke n'ime wafer 300 mm maka die nwere mpaghara A.
DPW = π·d²/(4A) − π·d/√(2A), d = 300 mm[9]

Enweghị usoro: ihe mmepụta mulberry32 nwere mkpụrụ; nkesa ejiri — uniform, exponential (inverse CDF), normal (Box–Muller), Poisson (Knuth). A na-egosi mkpụrụ ma nwee ike ikekọrịta ya.

Isi mmalite

  1. SEMI E10 — Specification for Definition and Measurement of Equipment Reliability, Availability, and Maintainability (RAM) and Utilization — SEMI
  2. ISO 14644-1:2015 Cleanrooms and associated controlled environments — Part 1: Classification of air cleanliness by particle concentration — ISO, 2015
  3. C. H. Stapper, F. M. Armstrong, K. Saji — Integrated circuit yield statistics — Proceedings of the IEEE 71(4), 1983
  4. J. A. Cunningham — The use and evaluation of yield models in integrated circuit manufacturing — IEEE Trans. Semiconductor Manufacturing 3(2), 1990
  5. W. J. Hopp, M. L. Spearman — Factory Physics (3rd ed.), ch. 7–8: Little’s law, Kingman (VUT) equation — Waveland Press, 2008
  6. J. D. C. Little — A Proof for the Queuing Formula L = λW — Operations Research 9(3), 1961
  7. D. C. Montgomery — Introduction to Statistical Quality Control (x̄ charts, process capability Cpk) — Wiley, 2019
  8. NIST/SEMATECH e-Handbook of Statistical Methods — 6.3 Univariate and Multivariate Control Charts; 6.1.6 Process capability — NIST
  9. Dies-per-wafer estimate DPW = πd²/(4S) − πd/√(2S) (de Vries, “Investigation of gross die per wafer formulas”, IEEE TSM 18(1)) — IEEE, 2005
  10. Fan affinity laws: flow ∝ speed, pressure ∝ speed², power ∝ speed³ — U.S. DOE — Improving Fan System Performance: A Sourcebook for Industry
  11. EN 1822-1:2019 High efficiency air filters (EPA, HEPA and ULPA) — classification (U15 ≥ 99.9995 % at MPPS) — CEN, 2019
  12. Western Electric Statistical Quality Control Handbook (1956) — zone rules for control charts — Western Electric / NIST e-Handbook 6.3.2
  13. W. Whyte — Cleanroom Technology: Fundamentals of Design, Testing and Operation (2nd ed.), ch. on dispersion of particles from people; well-mixed room dilution equation — Wiley, 2010
  14. Yu. I. Bogdanov, N. A. Bogdanova, V. L. Dshkhunyan — Statistical Yield Modeling for IC Manufacture: Hierarchical Fault Distributions (§2 Compound Poisson distribution, after Eq. (17), p. 4 of the arXiv PDF — large-area clustering negative binomial model: the cluster parameter’s “typical values approximately range from 0.3 to 7”) — arXiv physics/0303039, 2003
  15. R. C. Leachman — Yield Modeling and Analysis (Poisson, Murphy, Seeds, negative-binomial models; §8: SMLY survey with C. N. Berglund for International SEMATECH, 2002–03 — yield loss fitted as YL(t) = YL(0)·e^(−λt), Table 2 averages 4.4 / 4.0 / 6.5 %/month at 350 / 250 / 180 nm) — UC Berkeley, IEOR 130 course notes (unpublished), 2014
  16. A. Klemmt, L. Mönch — Scheduling jobs with time constraints between consecutive process steps in semiconductor manufacturing (time windows set by process engineering against native oxidation and contamination; jobs that violate them are scrapped) — Proceedings of the 2012 Winter Simulation Conference, 2012
  17. NIST/SEMATECH e-Handbook of Statistical Methods — 8.1.6.1 Exponential distribution (constant failure rate) — NIST
  18. C. Weber — Yield learning and the sources of profitability in semiconductor manufacturing and process development — IEEE Trans. Semiconductor Manufacturing 17(4), 2004
  19. M. Abramowitz, I. Stegun — Handbook of Mathematical Functions, 26.2.17 — NBS, 1964

Ndị na-arụ nke a dị ka ọrụ

Ụdị agụmakwụkwọ — ọ bụghị maka mkpebi ọrụ. Ebe n'ezie na-edozi ihe niile na-agbanwe agbanwe dịka ngwá ọrụ na data nke ha si dị.