Yarimo‘tkazgich fabi Jonli model

Siz 300 mm plastinali fabning litografiya uchastkasini boshqarasiz — sakkizta skaner, toza xona va texnik shartlar ichida qolishi kerak bo‘lgan retsept. Plastinalar navbatda turadi, uskunalar buziladi, zarralar kirib keladi va hosildorlik har bir qaror bilan o‘zgaradi.

Nimani o‘rganasiz

Simulyator

Vaqt 0 soat
Uskuna tayyorligi 100% · Jarayondagi ish 20 · Toza xona ISO sinfi 3,4S1⚙S2▶S3▶S4▶S5▶S6▶S7‖S8‖WIP 20▶ 34 wph
  • Ishlab chiqarish
  • Kutish
  • Muhandislik
  • To‘xtagan (ta’mir)
  • Havodagi zarralar

Boshqaruvlar

Soatiga uchastkaga chiqariladigan plastinalar.

Jarayonni o‘rgatadigan tajribaviy plastina partiyalariga beriladigan skaner vaqtining ulushi: hozir mahsulot kamroq, keyin nuqsonlar kamroq.

Har bir texnik bir vaqtda bitta uskunani ta’mirlaydi.

Havo almashinuvi ko‘proq bo‘lsa, zarralar suyulishi; ventilyator quvvati tezlikning kubiga qarab o‘sadi.

Har bir maxsus kiyimdagi odam ham zarra chiqaradi.

Soatiga o‘lchanadigan plastinalar: SPC grafigi aniqroq, quvvat bir oz kamroq.

3 soat oladi va ular ishlayotgan paytda xonaga 2 kishi qo‘shadi.

Yarim quvvatda 2 soat, so‘ng jarayon yana nishonda.

Ko‘rsatkichlar

Chiqqan yaroqli kristallar
19547/h
Hosildorlik
89,8%
normal
Toza xona ISO sinfi
3,4
normal
Uchastka sikl vaqti
1,6h
normal
Uskuna tayyorligi100 %
Uskunadan foydalanish71 %
Muhandislik vaqti10 %
Ishga tushirilgan plastinalar34 wph
Jarayondagi ish20 wafers
Nuqson zichligi0,110 /cm²
Jarayon qobiliyati Cpk1,25 · ogohlantirish
Texnik shartdan tashqari (plastina ekvivalenti)0,0 wph
Uchastka quvvati1339 kW

Tendensiya

Chiqqan yaroqli kristallar: — /h250000

SPC namunasi (CD siljishi)

SPC namunasi (CD siljishi): 0 ⚑+3σ−3σ

Inqiroz ssenariylari

1-daraja · Zarralar chetga chiqishi

Mobil chip liniyasida odatiy smena. Uchastka tepasida qayerdadir shift filtri buzilish arafasida. Toza xonani sinfda ushlang, hosildorlikni himoya qiling — va ventilyatorlarni kerakdan ortiq to‘liq tezlikda qoldirmang.

  • Oxirida ISO sinfi yana ≤ 3,6
  • Birinchi soatdan keyin hech qachon 4,55 sinfdan oshmasin
  • Chetga chiqishning dastlabki soatlarida o‘rtacha hosildorlik ≥ 87 %
  • Ikkinchi yarmida uchastkaning o‘rtacha quvvati ≤ 1380 kW

2-daraja · Skaner avariyasi

Uchastka soatiga 38 plastina ishga tushirish bilan qizg‘in ishlayapti. Uchta skaner bir vaqtda to‘xtash arafasida. Ularni qaytarayotganingizda navbat portlab ketmasligini ta’minlang va baribir yaroqli kristallarni yetkazing.

  • Oxirida WIP ≤ 60 plastina
  • Avariyadan keyin sikl vaqti hech qachon 3,5 soatdan oshmaydi (navbat vaqti oynasi)
  • 48 soatda kamida 900 000 yaroqli kristall
  • 48 soatda kamida 1600 ta ishga tushirilgan plastina (ishga tushirish rejasi: soatiga 34 ta)

3-daraja · Retsept og‘ishi

Kecha yangi retsept versiyasi ishga tushdi. Hali hech kim uning kritik o‘lchamni sekin siljitishini bilmaydi. SPC grafigini kuzating: og‘ishni tuting va plastinalar texnik shartdan chiqib ketmasdan oldin qaytaring.

  • Jami ko‘pi bilan 12 ta texnik shartdan tashqari plastina ekvivalenti
  • Oxirida Cpk ≥ 1,2
  • Kamida 620 000 yaroqli kristall

2-daraja · Yangi mahsulot o‘sishi

Katta akselerator chip yetilmagan jarayon bilan ishlab chiqarishga kiradi: nuqson zichligi yuqori va 600 mm² li kristall kechirmaydi. Liniya soatiga 42 plastina ishga tushirish bilan yuklangan. Sizda 14 kun bor. Bugungi chiqarishni ertangi o‘rganish bilan muvozanatlang.

  • 14-kunda nuqson zichligi ≤ 0,08 /cm²
  • 14 kunda kamida 660 000 yaroqli kristall

Asos — raqamlar ortidagi model

Simulyator ishlatadigan har bir bog‘lanish, manbasi bilan. Taxmin deb belgilangan doimiylar misol kalibrlashlardir.

Uskuna holatlari SEMI E10 ga amal qiladi: ishlab chiqarish, kutish, muhandislik, rejali va rejasiz to‘xtash.
Availability = up tools / 8 · Utilization = productive tool-hours / total[1]
Uskunalar eksponensial buzilishgacha vaqt bilan tasodifiy buziladi; ta’mirlar bo‘sh texnikni kutadi.
P(fail in Δt) = 1 − e^(−Δt/MTBF), MTBF = 250 h; repair ~ Exp(mean 6 h) once a technician is free[17][1]Taxmin: kattaliklar (MTBF, hosil bo‘lish tezliklari, k, τ) misol kalibrlashlardir, haqiqiy fabdan olingan ma’lumot emas.
Little qonuni jarayondagi ish, o‘tkazuvchanlik va sikl vaqtini bog‘laydi.
CT = WIP / TH = T0 + queue / TH, T0 = 1 h[6][5]
Barqaror liniyada o‘tkazuvchanlik ishga tushirish tezligiga teng, shuning uchun ishga tushirilmagan plastina — hech qachon chiqmaydigan plastina. Bosqichlar orasida juda uzoq kutgan plastinalar navbat vaqti oynasini buzadi.
TH = release rate while u < 1 ⇒ wafers out ≈ Σ starts; queue wait = CT − T0 = queue / TH ≤ queue-time window (3.5 h CT in semi-tool-crash)[5][16]Taxmin: 3,5 soatlik sikl vaqti chegarasi navbat vaqti oynasi o‘rnida turadi; haqiqiy oynalarni jarayon muhandisligi har bir bosqich uchun belgilaydi va ularni buzgan plastinalar odatda brakka chiqariladi.
Kingman yaqinlashuvi: navbat vaqti u/(1−u) kabi o‘sadi — foydalanish 100 % ga yaqinlashganda u portlaydi.
CTq ≈ ((ca² + ce²)/2) · (u/(1−u)) · te[5]Tushunish uchun ko‘rsatilgan: simulyator navbati bu formuladan emas, tasodifiy kelishlar va tasodifiy quvvatdan hosil bo‘ladi.
D o‘lchamli zarralar uchun ISO 14644-1 sinf chegarasi; 0,1 µm da sinf konsentratsiyaning logarifmi.
Cn = 10^N · (0.1/D)^2.08 ⇒ N = log10(C≥0.1µm)[2]
Yaxshi aralashgan xona: konsentratsiya = hosil bo‘lish ÷ (havo almashinuvi × hajm × filtr samaradorligi).
C = G / (ACH · V · η)[13][11]Taxmin: kattaliklar (MTBF, hosil bo‘lish tezliklari, k, τ) misol kalibrlashlardir, haqiqiy fabdan olingan ma’lumot emas.
Ventilyator o‘xshashlik qonuni: quvvat ventilyator tezligining kubi bilan ortadi.
P_fan = P_max · (speed)³[10]
Manfiy binomial hosildorlik: nuqsonlar to‘planadi, shuning uchun hosildorlik Puasson modeli bashorat qilganidan sekinroq tushadi.
Y = (1 + A·D/α)^(−α), α = 2 (α→∞: Y = e^(−A·D))[3][4][15][14]
Hosildorlikni o‘rganish: muhandislik vaqti sarflangan sari nuqson zichligi yetuk darajaga qarab kamayadi.
D(t+Δt) = D∞ + (D − D∞)·e^(−Δt/τ), τ = 120 h · (0.10 / engineering share)[15][18]Taxmin: τ ma’lum qilingan sanoat o‘rganish tezliklariga (oyiga 4–6,5 %, Leachman) nisbatan taxminan 100 baravar siqilgan, shunda 14 kunlik ssenariy ta’sirni ko‘rsatadi.
Plastinalarga tushgan zarralar havo konsentratsiyasiga mutanosib ravishda halokatli nuqsonlarni qo‘shadi.
D_total = D_learn + k · C, k = 4·10⁻⁶ cm⁻² per particle/m³Taxmin: misol doimiy — haqiqiy fablar halokatli nuqson tezliklarini o‘z tekshiruv ma’lumotlaridan kalibrlaydi.
Parametrik hosildorlik: oddiy jarayonning texnik shartlar chegarasi ichiga tushadigan ulushi; Cpk zaxirani o‘lchaydi.
Y_param = Φ((USL−μ)/σ) − Φ((LSL−μ)/σ), Cpk = min(USL−μ, μ−LSL)/(3σ)[7][8][19]
SPC: n ta namuna o‘rtachalari, ±3σ/√n nazorat chegaralari va zona qoidalari bilan.
x̄ ~ N(μ, σ/√n), control limits ±3σ/√n; zone rules (2 of 3 beyond 2σ, 4 of 5 beyond 1σ, 8 on one side)[8][7][12]
Model ishlatadigan boshqa ekspluatatsiya doimiylari.
8 scanners × 6 wafer-starts/h · metrology −0.5 % capacity per sampled wafer/h · rollback: 2 h at half capacity + 4 wafer-equivalents reworked · drift 0.25 nm/h · crash repair 18 technician-hours · leak crew +2 people for 3 h · tools 150 kW busy / 60 kW idle, fans 150 kW at 100 %Taxmin: kattaliklar (MTBF, hosil bo‘lish tezliklari, k, τ) misol kalibrlashlardir, haqiqiy fabdan olingan ma’lumot emas.
A yuzali kristall uchun 300 mm plastinadagi yalpi kristallar.
DPW = π·d²/(4A) − π·d/√(2A), d = 300 mm[9]

Tasodifiylik: seedli mulberry32 generatori; ishlatilgan taqsimotlar — tekis, eksponensial (teskari CDF), normal (Box–Muller), Puasson (Knuth). Seed ko‘rsatiladi va ulashiladi.

Manbalar

  1. SEMI E10 — Specification for Definition and Measurement of Equipment Reliability, Availability, and Maintainability (RAM) and Utilization — SEMI
  2. ISO 14644-1:2015 Cleanrooms and associated controlled environments — Part 1: Classification of air cleanliness by particle concentration — ISO, 2015
  3. C. H. Stapper, F. M. Armstrong, K. Saji — Integrated circuit yield statistics — Proceedings of the IEEE 71(4), 1983
  4. J. A. Cunningham — The use and evaluation of yield models in integrated circuit manufacturing — IEEE Trans. Semiconductor Manufacturing 3(2), 1990
  5. W. J. Hopp, M. L. Spearman — Factory Physics (3rd ed.), ch. 7–8: Little’s law, Kingman (VUT) equation — Waveland Press, 2008
  6. J. D. C. Little — A Proof for the Queuing Formula L = λW — Operations Research 9(3), 1961
  7. D. C. Montgomery — Introduction to Statistical Quality Control (x̄ charts, process capability Cpk) — Wiley, 2019
  8. NIST/SEMATECH e-Handbook of Statistical Methods — 6.3 Univariate and Multivariate Control Charts; 6.1.6 Process capability — NIST
  9. Dies-per-wafer estimate DPW = πd²/(4S) − πd/√(2S) (de Vries, “Investigation of gross die per wafer formulas”, IEEE TSM 18(1)) — IEEE, 2005
  10. Fan affinity laws: flow ∝ speed, pressure ∝ speed², power ∝ speed³ — U.S. DOE — Improving Fan System Performance: A Sourcebook for Industry
  11. EN 1822-1:2019 High efficiency air filters (EPA, HEPA and ULPA) — classification (U15 ≥ 99.9995 % at MPPS) — CEN, 2019
  12. Western Electric Statistical Quality Control Handbook (1956) — zone rules for control charts — Western Electric / NIST e-Handbook 6.3.2
  13. W. Whyte — Cleanroom Technology: Fundamentals of Design, Testing and Operation (2nd ed.), ch. on dispersion of particles from people; well-mixed room dilution equation — Wiley, 2010
  14. Yu. I. Bogdanov, N. A. Bogdanova, V. L. Dshkhunyan — Statistical Yield Modeling for IC Manufacture: Hierarchical Fault Distributions (§2 Compound Poisson distribution, after Eq. (17), p. 4 of the arXiv PDF — large-area clustering negative binomial model: the cluster parameter’s “typical values approximately range from 0.3 to 7”) — arXiv physics/0303039, 2003
  15. R. C. Leachman — Yield Modeling and Analysis (Poisson, Murphy, Seeds, negative-binomial models; §8: SMLY survey with C. N. Berglund for International SEMATECH, 2002–03 — yield loss fitted as YL(t) = YL(0)·e^(−λt), Table 2 averages 4.4 / 4.0 / 6.5 %/month at 350 / 250 / 180 nm) — UC Berkeley, IEOR 130 course notes (unpublished), 2014
  16. A. Klemmt, L. Mönch — Scheduling jobs with time constraints between consecutive process steps in semiconductor manufacturing (time windows set by process engineering against native oxidation and contamination; jobs that violate them are scrapped) — Proceedings of the 2012 Winter Simulation Conference, 2012
  17. NIST/SEMATECH e-Handbook of Statistical Methods — 8.1.6.1 Exponential distribution (constant failure rate) — NIST
  18. C. Weber — Yield learning and the sources of profitability in semiconductor manufacturing and process development — IEEE Trans. Semiconductor Manufacturing 17(4), 2004
  19. M. Abramowitz, I. Stegun — Handbook of Mathematical Functions, 26.2.17 — NBS, 1964

Buni kasb sifatida kim qiladi

Ta’limiy model — operatsion qarorlar uchun emas. Haqiqiy obyektlar har bir doimiyni o‘z jihozi va ma’lumotlariga moslab kalibrlaydi.